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| ZXTN2040F SOT23 40 volt NPN silicon planar medium power transistor Summary V(BR)CEO > 40V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 package Applications Power MOSFET gate driving Low loss power switching Ordering information Device ZXTN2040FTA ZXTN2040FTC Reel size 7" 13" Tape width 8mm 8mm Quantity per reel 3,000 10,000 Pin out - top view Device marking N40 Issue 2 - August 2005 (c) Zetex Semiconductors plc 2005 1 www.zetex.com ZXTN2040F Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current * Peak base current Power dissipation @ TA=25C* Operating and storage temperature Symbol VCBO VCEO VEBO ICM IC IBM PD Tj:Tstg Limit 40 40 5.0 2 1 1 350 -55 to +150 Unit V V V A A A mW C NOTES: * For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - August 2005 (c) Zetex Semiconductors plc 2005 2 www.zetex.com ZXTN2040F Electrical characteristics (@TAMB = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICES ICBO IEBO hFE 300 300 200 35 Collector-emitter saturation voltage VCE(sat) 0.2 0.3 0.5 Base-emitter saturation voltage Base-emitter turn-on voltage Transition frequency Output capacitance VBE(sat) VBE(on) fT Cobo 150 10 pF 1.1 1.0 V V V V V 900 Min. 40 40 5 100 100 100 Max. Unit V V V nA nA nA Conditions IC=100 A IC=10mA* IE=100 A VCE=30V VCB=30V VEB=4V IC=1mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=100mA, IB=1mA* IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=1A, IB=100mA* IC=1A, VCE=5V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz NOTES: * Measured under pulsed conditions. Pulse width=300 S. Duty cycle Spice parameter data is available upon request for this device 2% Issue 2 - August 2005 (c) Zetex Semiconductors plc 2005 3 www.zetex.com ZXTN2040F Typical characteristics 0.5 0.4 0.5 IC/IB=10 +25 C 0.4 VCE(sat) -(V) VCE(sat) -(V) 0.3 0.2 0.1 0 1mA 10mA IC/IB=10 IC/IB=50 IC/IB=100 0.3 0.2 0.1 0 -55 C +25 C +100 C 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC 1000 VCE=5V VCE(sat) v IC 1.4 1.2 IC/IB=10 -55 C +25 C +100 C h FE - Typical Gain +100 C V BE(sat) - (V) 10mA 100mA 1A 10A 800 600 +25 C 1.0 0.8 0.6 0.4 0.2 0 400 -55 C 200 0 1mA 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current hFE V IC I C -Collector Current (A) VCE=5V VBE(sat) v IC 10 1.0 1 VBE(on) - (V) 0.8 -55 C 0.6 +25 C 0.1 0.4 +100 C 0.01 DC 1s 100ms 10ms 1ms 100us 0.2 0 1mA 10mA 100mA 1A 10A 0.001 0.1V 1V 10V 100V IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area Issue 2 - August 2005 (c) Zetex Semiconductors plc 2005 4 www.zetex.com ZXTN2040F Packaging details - SOT23 L H N D 3 leads G M B A C K F Package dimensions Dimensions in inches are control dimensions, dimensions in millimeters are approximate. Dim. Millimeters Min. A B C D F G 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 H K L M N Dim. Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 0.95 Nom. - 0.0375 Nom. - 1.90 Nom. 0.075 Nom. Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - August 2005 (c) Zetex Semiconductors plc 2005 5 www.zetex.com |
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